Infineon IPG20N06S4-15A: A High-Performance 60V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPG20N06S4-15A stands out as a premier solution, engineered to meet the rigorous demands of modern switch-mode power supplies (SMPS), motor control, and various high-frequency switching applications. As part of Infineon's esteemed OptiMOS™ power MOSFET family, this device sets a high benchmark with its exceptional combination of low on-state resistance and superior switching characteristics.

At its core, the IPG20N06S4-15A is a N-channel enhancement mode MOSFET built on advanced silicon technology. Its defining feature is an ultra-low maximum on-state resistance (RDS(on)) of just 2.8 mΩ at a gate-source voltage of 10 V. This remarkably low resistance is a key contributor to minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The device is rated for a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 200 A at a case temperature (TC) of 25°C, showcasing its ability to handle significant power levels with ease.

A critical advantage of the OptiMOS™ technology is the excellent figure-of-merit (FOM), which balances RDS(on) and gate charge (Qg). The IPG20N06S4-15A exhibits low gate charge, leading to reduced switching losses and enabling operation at higher frequencies. This allows designers to shrink the size of magnetic components and capacitors, ultimately leading to more compact and cost-effective power system designs.

The MOSFET is offered in the robust and industry-standard TO-220 FullPAK package. This package is renowned for its superior thermal performance, as it features an isolated mounting base. This isolation enhances safety and simplifies the assembly process by eliminating the need for an additional insulation kit between the device and the heatsink. The package's design ensures efficient heat dissipation, which is crucial for maintaining performance and reliability under high-stress conditions.

Furthermore, the device is characterized by its fast switching speed and avalanche ruggedness, ensuring dependable operation in harsh environments and during voltage transients. Its 100% avalanche tested qualification provides an extra layer of confidence for applications prone to inductive switching events.

ICGOO FIND: The Infineon IPG20N06S4-15A is a top-tier power MOSFET that delivers an outstanding blend of ultra-low conduction loss, high current capability, and robust thermal performance. It is an ideal choice for engineers aiming to push the boundaries of efficiency and power density in their designs.

Keywords: OptiMOS™, Low RDS(on), High Efficiency, TO-220 FullPAK, Fast Switching.