**HMC462LP5ETR: A 6 to 20 GHz GaAs pHEMT MMIC Medium Power Amplifier**
The **HMC462LP5ETR** is a high-performance **GaAs pHEMT MMIC Medium Power Amplifier** designed to operate across an exceptionally broad frequency range from **6 to 20 GHz**. This device integrates a complete monolithic solution, offering a combination of high gain, excellent power output, and superior linearity, making it an indispensable component for a wide array of modern microwave systems.
Engineered on an advanced GaAs (Gallium Arsenide) pseudomorphic High Electron Mobility Transistor (pHEMT) process, the amplifier delivers outstanding performance metrics. It provides a typical **small-signal gain of 18 dB**, ensuring significant signal amplification across the entire band. For output power, it achieves a **saturated power output (PSAT) of +25 dBm** and an **output IP3 of +33 dBm**, highlighting its capability to handle medium-power applications with excellent linearity and minimal distortion. This makes it highly effective in both continuous wave (CW) and pulsed operating conditions.
The amplifier is presented in a compact, RoHS-compliant **5x5 mm LP5 leadless package**, which is designed for easy integration into multi-chip modules (MCMs) and high-frequency PCBs. Its architecture includes on-chip DC blocking capacitors at the RF ports and RF short circuits for the bias lines, simplifying the external matching circuit requirements. Only a single positive supply voltage is needed, typically **+5V at 280 mA**, streamlining the power management design.
The **HMC462LP5ETR** is ideally suited for a diverse set of applications, including but not limited to:
* **Point-to-Point and Point-to-Multi-Point Radios**
* **Military and Aerospace: Radar, EW (Electronic Warfare), and COMINT systems**
* **Test and Measurement Equipment**
* **Satellite Communication (SATCOM) terminals**
* **Fiber Optic and 5G Infrastructure**
ICGOOODFIND: The HMC462LP5ETR stands out as a robust and versatile MMIC solution, offering **exceptional bandwidth from 6 to 20 GHz**, **high linearity**, and **medium power output** in a minimal footprint. Its comprehensive integration and reliable performance make it a preferred choice for designers pushing the limits of microwave and millimeter-wave technology.
**Keywords: GaAs pHEMT, Medium Power Amplifier, 6 to 20 GHz, MMIC, High Linearity**