Infineon BSC079N10NS: A High-Performance OptiMOS™ Power MOSFET for Advanced Switching Applications

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC079N10NS stands out as a premier solution, engineered to meet the rigorous demands of modern high-frequency switching applications. As part of Infineon's esteemed OptiMOS™ family, this N-channel power MOSFET is designed to deliver exceptional performance in a compact package, making it an ideal choice for applications ranging from server and telecom power supplies to motor drives and solar inverters.

Unmatched Efficiency and Power Density

A key highlight of the BSC079N10NS is its extremely low on-state resistance (RDS(on)) of just 7.9 mΩ maximum at 10 V. This minimal resistance is critical for reducing conduction losses, which directly translates to higher system efficiency and lower power dissipation. Combined with its superior switching characteristics, this MOSFET minimizes both switching and conduction losses, enabling designers to achieve higher power density and operate at higher frequencies without compromising thermal management. The device is optimized for use in synchronous rectification and other switch-mode power supply (SMPS) topologies, where every milliohm counts.

Robust Thermal Performance and Reliability

The component is housed in a SuperSO8 package, which offers a significantly improved thermal footprint compared to standard SO-8 packages. This advanced packaging allows for better heat dissipation, supporting higher continuous drain current (Id) up to 42 A and ensuring reliable operation even under strenuous conditions. The low thermal resistance from junction to case (RthJC) enhances its ability to handle high power pulses, contributing to the overall longevity and robustness of the end application. Furthermore, the device features a low gate charge (Qg) and exceptional avalanche ruggedness, providing an added layer of protection against voltage spikes and unpredictable load conditions.

Designed for Advanced Applications

The BSC079N10NS is particularly suited for high-frequency DC-DC converters and power management systems where switching speed and efficiency are critical. Its performance attributes make it a cornerstone technology for advancing the capabilities of modern computing, telecommunications, and renewable energy infrastructure. By integrating this MOSFET, designers can create systems that are not only more efficient but also more compact and cost-effective, pushing the boundaries of what is possible in power conversion technology.

ICGOOODFIND

The Infineon BSC079N10NS exemplifies the innovation in power semiconductor technology, offering a blend of low losses, excellent thermal performance, and high reliability that is essential for next-generation power systems.

Keywords:

OptiMOS™, Low RDS(on), Synchronous Rectification, SuperSO8 Package, High-Frequency Switching