Infineon IPW60R041C6FKSA1 CoolMOS™ Power MOSFET: Powering the Next Generation of High-Efficiency Systems

In the relentless pursuit of higher energy efficiency and power density across industries such as server and telecom power supplies, industrial motor drives, and renewable energy systems, the choice of switching device is paramount. The Infineon IPW60R041C6FKSA1, a member of the renowned CoolMOS™ C6 FD family, stands out as a premier solution engineered to meet these demanding challenges. This superjunction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is specifically designed to minimize losses and maximize performance in high-frequency switching topologies.

A key metric for any power MOSFET is its on-state resistance (R DS(on)), which directly dictates conduction losses. The IPW60R041C6FKSA1 boasts an impressively low maximum R DS(on) of just 41 mΩ at a gate-source voltage of 10 V. This low resistance ensures that minimal energy is wasted as heat when the device is fully switched on, contributing significantly to overall system efficiency. Furthermore, its 650 V voltage rating provides a robust safety margin for operation in off-line switch-mode power supplies (SMPS) like PFC (Power Factor Correction) stages and LLC resonant converters, protecting against voltage spikes and ensuring reliable operation.

Beyond low conduction losses, switching performance is critical. The CoolMOS™ C6 FD technology achieves an exceptional balance between low gate charge (Q G) and low effective output capacitance (C OSS(eff)). This optimized charge balance results in ultra-low switching losses, enabling designers to push switching frequencies higher. Operating at higher frequencies allows for the use of smaller passive components like transformers and capacitors, which directly translates to increased power density—a crucial factor for modern, compact power designs.

The device also features an integrated fast body diode with excellent reverse recovery characteristics. This is vital for operation in half-bridge and full-bridge circuits, where the body diode conducts during dead time. The diode's soft recovery minimizes ringing and electromagnetic interference (EMI), simplifying filter design and ensuring compliance with stringent EMI regulations.

Housed in a TO-247 package, the IPW60R041C6FKSA1 offers a tried-and-true form factor with excellent thermal performance, facilitating efficient heat dissipation away from the silicon die. This makes it suitable for high-power applications where managing thermal stress is essential for long-term reliability.

ICGOOODFIND: The Infineon IPW60R041C6FKSA1 CoolMOS™ MOSFET is a high-performance switch that excels in demanding high-voltage, high-frequency applications. Its superior combination of extremely low on-resistance, minimized switching losses, and robust 650 V capability makes it an ideal cornerstone for engineers designing efficient, power-dense, and reliable next-generation power conversion systems.

Keywords: Power MOSFET, High-Efficiency, Switching Losses, Power Density, CoolMOS™