Infineon FF11MR12W1M1B70BPSA1: 1200V 11mΩ SiC Trench MOSFET Module for High-Performance Power Conversion

The rapid evolution of power electronics demands components that offer higher efficiency, greater power density, and superior thermal performance. At the forefront of this revolution is silicon carbide (SiC) technology, and Infineon's FF11MR12W1M1B70BPSA1 power module stands as a prime example of its advanced application. This module is engineered to meet the rigorous requirements of modern high-performance power conversion systems.

A Leap in Performance with SiC Trench Technology

The core of this module is built upon Infineon's proprietary SiC Trench MOSFET technology. Unlike traditional planar SiC designs, the trench architecture allows for a significantly higher cell density. This translates directly into a dramatically reduced specific on-resistance (RDS(on)) of just 11mΩ at a blocking voltage of 1200V. This exceptionally low resistance is a key enabler for minimizing conduction losses, which is paramount for achieving high efficiency, especially in high-current applications.

Designed for Demanding Applications

The FF11MR12W1M1B70BPSA1 is not a discrete component but a fully-fledged half-bridge module. This integrated package contains two MOSFETs configured for a standard switching leg, simplifying system design, saving space, and improving reliability by reducing the number of external interconnections. It is specifically designed for high-power scenarios where performance cannot be compromised, such as:

Industrial motor drives and servo controllers

Renewable energy inverters (solar, wind)

Uninterruptible Power Supplies (UPS) and energy storage systems (ESS)

Electric vehicle (EV) charging infrastructure

High-frequency switched-mode power supplies (SMPS)

Beyond Low RDS(on): A Holistic High-Performance Package

The benefits extend far beyond its low on-resistance. The use of SiC technology inherently allows for higher switching frequencies compared to silicon-based IGBTs. This capability enables designers to use smaller passive components like inductors and capacitors, leading to a substantial increase in overall power density. Furthermore, the module features a low thermal resistance and is compatible with a baseplate temperature of up to 100°C (Tvj max = 150°C), ensuring robust performance and excellent thermal management in demanding environments. The inclusion of an NTC thermistor provides a critical interface for system-level temperature monitoring and protection.

Driving the Future of Power Conversion

By integrating state-of-the-art SiC trench technology into a robust and thermally efficient module, Infineon provides a solution that directly addresses the challenges of energy loss, size, and weight in power systems. The FF11MR12W1M1B70BPSA1 empowers engineers to push the boundaries of efficiency and create the next generation of compact, reliable, and high-performance power conversion units.

ICGOODFIND: The Infineon FF11MR12W1M1B70BPSA1 represents a significant leap in power module technology, combining ultra-low 11mΩ resistance, high 1200V blocking voltage, and the superior switching characteristics of SiC in a integrated half-bridge package to maximize efficiency and power density in critical applications.

Keywords:

1. SiC Trench MOSFET

2. 11mΩ

3. 1200V

4. Power Module

5. High-Performance Conversion