Infineon IPP126N10N3G: High-Performance N-Channel Power MOSFET for Efficient Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is the Infineon IPP126N10N3G, an N-channel power MOSFET engineered to set new benchmarks in high-performance switching applications. This device encapsulates the latest advancements in semiconductor design, offering system designers a superior component for demanding environments.
A cornerstone of the IPP126N10N3G's performance is its exceptionally low on-state resistance (R DS(on)) of just 1.26 mΩ (max). This ultra-low resistance is paramount for minimizing conduction losses. When the MOSFET is fully turned on, it behaves almost like a simple resistor; a lower R DS(on) means less power is wasted as heat during current flow. This characteristic is crucial for improving the overall system efficiency, especially in high-current applications, and allows for more compact designs by reducing the need for extensive heat sinking.
Complementing its low conduction losses are its outstanding switching characteristics. The device is optimized for fast switching speeds, which directly reduces switching losses—the energy dissipated during the transition between the on and off states. This is vital for high-frequency operations found in switch-mode power supplies (SMPS), motor drives, and DC-DC converters. Faster switching enables the use of smaller passive components like inductors and capacitors, further increasing power density and reducing the overall system footprint and cost.
The IPP126N10N3G is built on Infineon's advanced OptiMOS 6 technology platform. This technology provides a superior balance of key parameters, including R DS(on), gate charge (Q G ), and figure-of-merit (FOM). The result is a robust 100V MOSFET capable of handling continuous drain current (I D ) up to 600A, making it exceptionally versatile. Its wide operational range makes it an ideal choice for a diverse array of applications, from server and telecom power supplies and industrial motor control to renewable energy systems and high-performance computing.
Furthermore, the device is housed in a TO-LL package, which offers a low package profile and excellent thermal performance. The package's design ensures low parasitic inductance, which is beneficial for managing voltage spikes during fast switching transitions, thereby enhancing system reliability.
ICGOOODFIND: The Infineon IPP126N10N3G stands out as a premier solution for engineers demanding uncompromising efficiency and robustness. Its industry-leading combination of ultra-low R DS(on), fast switching speed, and high current capability, all delivered through advanced OptiMOS 6 technology, makes it an indispensable component for the next generation of high-efficiency power conversion systems.
Keywords: Power MOSFET, Low RDS(on), High-Efficiency, Fast Switching, OptiMOS 6
